It can be used for a wide range of applications, from data collection, where the number of write cycles may be critical, to demanding industrial controls, where the long write time of serial FLASH or EEPROM memory modules can cause data loss
S (28.6 x 25.4 mm)
mikroBUS
3.3V
GPIO,SPI
Bit configuration 256K, high endurance with 10 billion readwrites, low power operation
PWR
MB85RS256A, a 256 Kbit serial ferroelectric (FRAM) module from Fujitsu Semiconductor LTD
FRAM
FRAM click
FRAM 2 click
Suitable for low-power applications
S (28.6 x 25.4 mm)
mikroBUS
3.3V
GPIO,SPI
4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8, high-endurance 100 trillion (10^14) readwrites, 151-year data retention, low power consumption
CY15B104Q - a 4-Mbit non-volatile memory employing an advanced ferroelectric process
FRAM
FRAM 2 click
Excelon-LP click
It can be used for a wide range of applications, from data collection, where the number of write cycles may be critical, to demanding industrial controls, where the long write time of serial FLASH or EEPROM modules can cause data loss
M (42.9 x 25.4 mm)
mikroBUS
3.3V
SPI
Built with the advanced FRAM technology, endurance of 1014 readwrite cycles, data retention of over 150 years, industrial temperature range of –40˚C to +85˚C, high speed data transfer, low power consumption, no page buffering required
PWR
CY15B108Q, an 8 Mbit serial ferroelectric (FRAM) module from Cypress